The Advanced Technologies 2100 ICP Series Etching System is designed for R&D and low volume production applications for semiconductor, compound semiconductor and MEMS applications The system is capable of high etch rates with excellent uniformity through the use of our unique reactor design that utilizes a high density inductive coupled plasma source, tuned gas dynamics, high throughput turbomolecular pump and adjustable substrate bias control. The unit can routinely etch submicron geometries in a wide variety of materials including: dielectrics, semiconductors and metals using either fluorine or chlorine chemistries. Also, operation of the 2100 ICP Series is made safe through the use of numerous safety features including a completely sealed and exhaustible gas enclosure for maximum safety. Available in either a batch processing or loadlock configuration.
General Specs- Compact sized at 42 inches wide, 58 inches high and 32 inches deep.
- Computer control with touchscreen user interface.
- Windows NT operating software.
- Turbo pumped for low pressure (high gas throughput) operation.
- Tuned gas dynamics, providing guaranteed etch uniformity.
- High density plasma source for maximum etch rates.
For more in-depth information regarding the 2100 ICP, please contact a
sales representative.
RIE -
PE-CVD -
Mag Sputtering -
Flat Panel Display
